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Task 1: Theoretical & Experimental Study of Defects

Task 2: Innovative Growth and Fabrication Processes for Defect Reduction

Task 3: Evaluation of Defect Reduction Approaches and Device Applications

Broader Impact

Kickoff Meeting Agenda

Kickoff Documents (Restricted)

2011 Annual Review (Restricted)

Task 3: Evaluation of Defect Reduction Approaches and Device Applications

Task Leader: Yong Zhang (UNCC)

By exploring methods (see Tasks 1 and 2) to reduce defects, we will be able to produce practical T2SL lasers and detectors incorporating these approaches. A necessary step is to then evaluate the performance of the defect reduction methods to identify those that show the most promising improvements. This task focuss on a comprehensive study of the effects of defect reduction methods. The work will consist of:
  • Measurements to evaluate the effectiveness of defect reduction techniques;
  • Evaluation of defect reduction through device application;
  • A comprehensive theoretical model including the effects of defects to study the fundamental limits of T2SL.






I-V characteristic curves of a device before (BP) and after (AP) surface passivation. Direct comparison shows that surface channel and trap-assisted tunneling current, which dominate dark current, are significantly reduced.

S Mou, J. Li, and S. L. Chuang, JAP 102, 066103(2007).