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Project Overview

Task 1: Theoretical & Experimental Study of Defects

Task 2: Innovative Growth and Fabrication Processes for Defect Reduction

Task 3: Evaluation of Defect Reduction Approaches and Device Applications

Broader Impact

Kickoff Meeting

Kickoff Documents (Restricted)

2011 Annual Review (Restricted)

Broader Impact


Impact on DoD capabilities

    IR materials and devices have tremendous importance to DoD applications and capabilities.  Infrared III-V T2SLs offer complementary advantages over the state-of-the-art narrow bandgap semiconductors such as HgCdTe.  Optoelectronic devices such as lasers and detectors made of T2SLs are one of the more important devices for sensing, and imaging applications.  The current limitations to the device performance are the various kinds of defects in T2SL.  This program has proposed a systematic and comprehensive approach to address defect issues ranging from fundamental theory up to advanced device structures to mitigate the adverse impacts of defects.  Specifically, this program offers the following key aspects: i) theoretical models of defects to assist with a better understanding of defect formation in T2SLs; ii) improved material growth technologies with the capabilities for low-cost and volume production; iii) detailed materials knowledge for next generation IR devices; vi) possibilities to offer low-cost and high-performance IR lasers and detectors; and v) user-friendly software based on the new practical device model taking into account the effects of defects.  The attainment of all the objectives of this program will help maintain US leadership in the area of T2SLs research and development.

Research Training of Students

    At least ten (10) full-time graduate research assistants (GRAs) will be supported by this program. The proposed research will promote student recruitment, training, and learning at all levels through personal contact and interaction, scientific exchange, mentoring, training, and education.  The investigators are actively involved with the education and mentoring of graduate and undergraduate students in the areas of optoelectronic devices, materials science, growth, characterization, and modeling, as well as the preparation, analysis, interpretation, and publication of scientific data and results.  Working in such a stimulating environment will be a highly rewarding and educational experience, which should help prepare them for future careers in related areas of scientific research.  Frequent teleconferences, e-mails, and shared technical data, as well as the bi-annual review meetings, will provide an in-depth collaborative work environment.  Highly qualified undergraduate students will be selected to participate in meetings and project progress conferences as part of the ongoing undergraduate education program.


Institution # of full-time GRAs Major Research Tasks
UIUC (Chuang) 2 Device fabrication, passivation and characterization; theoretical modeling and simulation of the impacts of defects in T2SL device performance; device design and carrier transport physics
UIUC (Hsieh) 2 Various characterization techniques including SEM, TEM, X-ray diffraction, surface microanalysis (Auger, XPS and SIMS), and surface probing microscopy such as AFM and STM
ASU 4 Material growth and TEM characterization, device fabrication and characterization, modeling and data analysis
Georgia Tech 1 MOCVD growth of As/Sb T2SLs
UNCC 1 Theory and characterization of defects and electronic structure